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| SFH615A/SFH6156 Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS Features * Excellent CTR Linearity Depending on Forward Current * Isolation Test Voltage, 5300 VRMS e3 * Fast Switching Times * Low CTR Degradation * Low Coupling Capacitance * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 A1 C2 17448 4 3 C E 1 Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Order Information Part SFH615A-1 SFH615A-2 SFH615A-3 SFH615A-4 SFH6156-1 SFH6156-2 SFH6156-3 SFH6156-4 SFH615A-1X006 SFH615A-1X007 SFH615A-2X006 SFH615A-2X007 SFH615A-2X009 SFH615A-3X006 SFH615A-3X007 SFH615A-3X008 SFH615A-3X009 SFH615A-4X006 SFH615A-4X007 SFH615A-4X008 SFH615A-4X009 Remarks CTR 40 - 80 %, DIP-4 CTR 63 - 125 %, DIP-4 CTR 100 - 200 %, DIP-4 CTR 160 - 320 %, DIP-4 CTR 40 - 80 %, SMD-4 CTR 63 - 125 %, SMD-4 CTR 100 - 200 %, SMD-4 CTR 160 - 320 %, SMD-4 CTR 40 - 80 %, DIP-4 400 mil (option 6) CTR 40 - 80 %, SMD-4 (option 7) CTR 63 - 125 %, DIP-4 400 mil (option 6) CTR 63 - 125 %, SMD-4 (option 7) CTR 63 - 125 %, SMD-4 (option 9) CTR 100 - 200 %, DIP-4 400 mil (option 6) CTR 100 - 200 %, SMD-4 (option 7) CTR 100 - 200 %, SMD-4 (option 8) CTR 100 - 200 %, SMD-4 (option 9) CTR 160 - 320 %, DIP-4 400 mil (option 6) CTR 160 - 320 %, SMD-4 (option 7) CTR 160 - 320 %, SMD-4 (option 8) CTR 160 - 320 %, SMD-4 (option 9) Applications * Switchmode power supply * Telecom * Battery powered equipment Description The SFH615A (DIP) and SFH6156 (SMD) feature a variety of transfer ratios, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change. For additional information on the available options refer to Option Information. See TAPE AND REEL Section for 4-pin optocouplers T0 with 90 rotation. Document Number 83671 Rev. 2.0, 06-Sep-06 www.vishay.com 1 SFH615A/SFH6156 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage DC Forward current Surge forward current tp 10 s Test condition Symbol VR IF IFSM Value 6.0 60 2.5 Unit V mA A Output Parameter Collector-emitter voltage Emitter-collector voltage Collector current tp 1.0 ms Test condition Symbol VCE VCEO IC IC Value 70 7.0 50 100 Unit V V mA mA Coupler Parameter Isolation test voltage (between emitter and detector, refered to climate DIN 40046, part 2, Nov. 74 Creepage Clearance Insulation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Soldering temperature max. 10 s, Dip soldering distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tsld t = 1.0 s Test condition Symbol VISO Value 5300 Unit VRMS 7.0 7.0 0.4 175 1012 1011 - 55 to + 150 - 55 to + 100 260 mm mm mm C C C 200 P - Power Dissipation (mW) tot 150 Phototransistor 100 50 Diode 0 0 18483 25 50 75 100 125 Tamb - Ambient Temperature (C) 150 Figure 1. Permissible Power Dissipation vs. Ambient Temperature www.vishay.com 2 Document Number 83671 Rev. 2.0, 06-Sep-06 SFH615A/SFH6156 Vishay Semiconductors Thermal Characteristics The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers Application note. Parameter LED Power dissipation Output Power dissipation Maximum LED junction temperature Maximum output die junction temperature Thermal resistance, Junction Emitter to Board Thermal resistance, Junction Emitter to Case Thermal resistance, Junction Detector to Board Thermal resistance, Junction Detector to Case Thermal resistance, Junction Emitter to Junction Detector Thermal resistance, Board to Ambient* Thermal resistance, Case to Ambient* * For 2 layer FR4 board (4" x 3" x 0.062) TA Test condition at 25 C at 25 C Symbol Pdiss Pdiss Tjmax Tjmax Value 100 150 125 125 173 149 111 127 95 195 3573 Unit mW mW C C C/W C/W C/W C/W C/W C/W C/W EB EC DB DC ED BA CA CA TC Package DC TJD EC DE TJE DB TB EB BA 19996 TA Document Number 83671 Rev. 2.0, 06-Sep-06 www.vishay.com 3 SFH615A/SFH6156 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Test condition IF = 60 mA VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF IR CO Min Typ. 1.25 0.01 13 Max 1.65 10 Unit V A pF Output Parameter Collector-emitter capacitance Collector-emitter leakage current Test condition VCE = 5.0 V, f = 1.0 MHz VCE = 10 V SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 SFH615A-4 SFH6156-4 Part Symbol CCE ICEO ICEO ICEO ICEO Min Typ. 5.2 2.0 2.0 5.0 5.0 50 50 100 100 Max Unit pF nA nA nA nA Coupler Parameter Collector-emitter saturation voltage Coupling capacitance Test condition IF = 10 mA, IC = 2.5 mA Symbol VCEsat CC Min Typ. 0.25 0.4 Max 0.4 Unit V pF Current Transfer Ratio Parameter IC/IF Test condition IF = 10 mA, VCE = 5.0 V Part SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 SFH615A-4 SFH6156-4 IF = 1.0 mA, VCE = 5.0 V SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 SFH615A-4 SFH6156-4 Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min 40 63 100 160 13 22 34 56 30 45 70 90 Typ. Max 80 125 200 320 Unit % % % % % % % % www.vishay.com 4 Document Number 83671 Rev. 2.0, 06-Sep-06 SFH615A/SFH6156 Vishay Semiconductors Switching Characteristics Switching Non-saturated Parameter Rise Time Fall Time Turn-on time Turn-off time Cut-off frequency Parameter Rise time Test condition IF = 10 mA, VCC = 5.0 V, TA = 25 C, RL = 75 IF = 10 mA, VCC = 5.0 V, TA = 25 C, RL = 75 IF = 10 mA, VCC = 5.0 V, TA = 25 C, RL = 75 IF = 10 mA, VCC = 5.0 V, TA = 25 C, RL = 75 IF = 10 mA, VCC = 5.0 V, TA = 25 C, RL = 75 Symbol tr tf ton toff fctr Min Typ. 2.0 2.0 3.0 2.3 250 Max Unit s s s s kHz Switching Saturated Test condition VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 20 mA VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 10 mA Part SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 5.0 mA Fall time VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 20 mA VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 10 mA SFH615A-4 SFH6156-4 SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 5.0 mA Turn-on time VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 20 mA VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 10 mA SFH615A-4 SFH6156-4 SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 5.0 mA Turn-off time VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 20 mA VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 10 mA SFH615A-4 SFH6156-4 SFH615A-1 SFH6156-1 SFH615A-2 SFH6156-2 SFH615A-3 SFH6156-3 VCC = 5.0 V, TA = 25 C, RL = 1 k, IF = 5.0 mA SFH615A-4 SFH6156-4 Symbol tr tr tr tr tf tf tf tf ton ton ton ton toff toff toff toff Min Typ. 2.0 3.0 3.0 4.6 11 14 14 15 3.0 4.2 4.2 6.0 18 23 23 25 Max Unit s s s s s s s s s s s s s s s s Document Number 83671 Rev. 2.0, 06-Sep-06 www.vishay.com 5 SFH615A/SFH6156 Vishay Semiconductors Typical Characteristics Tamb = 25 C, unless otherwise specified 30 IF RL = 75 VCC = 5 V IC IC mA 20 IF =14 mA 12 mA 10 mA 8.0 mA 47 10 6.0 mA 4.0 mA 1.0 mA 2.0 mA V 15 isfh615a_01 0 0 isfh615a_04 5 VCE 10 Figure 2. Linear Operation (without Saturation) Figure 5. Output Characteristics (typ.) Collector Current vs. Collector-Emitter Voltage 1.2 V 25 50 75 IF 1 VCC = 5 V VF 1.1 1.0 47 0.9 isfh615a_02 isfh615a_05 10 -1 10 0 IF 101 mA 10 2 Figure 3. Switching Operation (with Saturation) Figure 6. Diode Forward Voltage (typ.) vs. Forward Current 10 3 % 5 IC IF 10 2 5 20 IF = 10 mA, VCE = 5.0 V 4 3 2 1 5 C 10 CCE pF 15 f = 1.0 MHz 101 - 25 isfh615a_01 0 25 TA 50 C 75 isfh615a_06 0 10 -2 10 -1 10 -0 Ve 101 V 102 Figure 4. Current Transfer Ratio (typical) vs. Temperature Figure 7. Transistor Capacitance (typ.) vs. Collector-Emitter Voltage www.vishay.com 6 Document Number 83671 Rev. 2.0, 06-Sep-06 SFH615A/SFH6156 Vishay Semiconductors 10 4 mA 5 10 3 5 10 2 5 10 1 10 - 5 isfh615a_07 IF D=0 0.005 0.01 0.02 0.05 0.1 D= tp T tp IF T 0.2 0.5 DC 10 - 4 10 - 3 Pulse cycle D = parameter 10 - 2 tp 10 - 1 10 0 s 10 1 Figure 8. Permissible Pulse Handling Capability Forward Current vs. Pulse Width Package Dimensions in Inches (mm) 2 1 pin one ID 0.255 (6.48) 0.268 (6.81) ISO Method A 3 4 0.179 (4.55) 0.190 (4.83) 0.030 (0.76) 0.045 (1.14) 0.031 (0.79) typ. 0.050 (1.27) typ. 0.130 (3.30) 0.150 (3.81) 4 typ. 0.018 (0.46) 0.022 (0.56) 10 0.020 (0.508) 0.035 (0.89) 0.050 (1.27) 0.100 (2.54) 3 - 9 0.300 (7.62) typ. 0.230 (5.84) 0.250 (6.35) 0.110 (2.79) 0.130 (3.30) i178027 0.008 (0.20) 0.012 (0.30) Document Number 83671 Rev. 2.0, 06-Sep-06 www.vishay.com 7 SFH615A/SFH6156 Vishay Semiconductors Package Dimensions in Inches (mm) SMD pin one ID 0.255 (6.48) 0.268 (6.81) 0.030 (0.76) 0.100 (2.54) R 0.010 (0.25) 0.070 (1.78) 0.315 (8.00) min 0.435 (11.05) 0.060 (1.52) 3 4 0.179 (4.55) 0.190 (4.83) 0.030 (0.76) 0.045 (1.14) 0.031 (0.79) typ. 0.130 (3.30) 0.150 (3.81) ISO Method A 0.375 (9.52) 0.395 (10.03) 0.296 (7.52) 0.312 (7.90) 10 0.010 (0.25) typ. i178029_1 4 typ. 1.00 (2.54)typ. 0.050 (1.27) typ. 0.098 (0.249) 0.035 (0.102) Lead coplanarity 0.004 max. 0.315 (8.00) min. 0.020 (0.508) 0.040 (1.02) 3 - 7 Option 9 0.375 (9.53) 0.395 (10.03) 0.300 (7.62) ref. 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30) typ. 0.020 (0.51) 0.040 (1.02) 0.315 (8.00) 18486 15 max. min. www.vishay.com 8 Document Number 83671 Rev. 2.0, 06-Sep-06 SFH615A/SFH6156 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 83671 Rev. 2.0, 06-Sep-06 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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